GA75TS60U IGBT. Datasheet pdf. Equivalent
Type Designator: GA75TS60U
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 285 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 94 nS
Coesⓘ - Output Capacitance, typ: 770 pF
Qgⓘ - Total Gate Charge, typ: 340 nC
Package: MODULE
GA75TS60U Transistor Equivalent Substitute - IGBT Cross-Reference Search
GA75TS60U Datasheet (PDF)
ga75ts60u.pdf
PD -50050CGA75TS60U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesFeaturesFeaturesFeaturesFeaturesVCES = 600V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 1.7V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 75A HEXFRED an
ga75ts120u.pdf
PD - 50062AGA75TS120U Ultra-FastTM Speed IGBT"HALF-BRIDGE" IGBT INT-A-PAKFeaturesVCES = 1200V Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200VCE(on) typ. = 2.1V kHz in resonant mode Very low conduction and switching losses@VGE = 15V, IC = 75A HEXFRED antiparallel diodes with ultra- soft
ga75ts12.pdf
GA75TS120UPbFVishay High Power Products"Half-Bridge" IGBT INT-A-PAK(Ultrafast Speed IGBT), 75 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL ap
Datasheet: GA250TS60U , GA300TD60U , GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , FGW75N60HD , GT10G101 , GT10J301 , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 .
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