STGB10NC60K Todos los transistores

 

STGB10NC60K IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGB10NC60K

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 65 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 6 nS

Coesⓘ - Capacitancia de salida, typ: 46 pF

Encapsulados: D2PAK

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STGB10NC60K datasheet

 ..1. Size:608K  st
stgb10nc60k stgp10nc60k stgd10nc60k.pdf pdf_icon

STGB10NC60K

STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25 C @100 C STGB10NC60K 600V

 ..2. Size:363K  st
stgb10nc60k.pdf pdf_icon

STGB10NC60K

STGB10NC60K 10 A, 600 V short-circuit rugged IGBT Features Low on voltage drop (VCESAT) Short-circuit withstand time 10 s TAB Applications High frequency motor controls 3 1 SMPS and PFC in both hard switch and resonant topologies D PAK Motor drives Description This device utilizes the advanced Power MESH Figure 1. Internal schematic diagram process r

 0.1. Size:605K  st
stgb10nc60kd.pdf pdf_icon

STGB10NC60K

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

 0.2. Size:607K  st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf pdf_icon

STGB10NC60K

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM

Otros transistores... VKI50-12P1 , VKI75-06P1 , VWI15-12P1 , VWI20-06P1 , VWI35-06P1 , STGB10NB40LZ , STGB10NB60S , STGB10NC60HD , TGAN60N60F2DS , STGB10NC60KD , STGB14NC60KD , STGB18N40LZ , STGB19NC60H , STGB19NC60HD , STGB19NC60K , STGB19NC60KD , STGB19NC60S .

 

 

 


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