STGB18N40LZ Todos los transistores

 

STGB18N40LZ - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGB18N40LZ
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 390 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 12 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 3.5 nS
   Coesⓘ - Capacitancia de salida, typ: 90 pF
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

STGB18N40LZ Datasheet (PDF)

 ..1. Size:888K  st
stgb18n40lz.pdf pdf_icon

STGB18N40LZ

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

 ..2. Size:890K  st
stgb18n40lz stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZ

STGB18N40LZSTGD18N40LZ, STGP18N40LZEAS 180 mJ - 390 V - internally clamped IGBTFeatures AEC Q101 compliant3 32 180 mJ of avalanche energy @ TC = 150 C, 11L = 3 mHDPAKIPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 21 Low saturation voltage TO-22031 High pulsed current capability 3

 0.1. Size:887K  st
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZ

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

 0.2. Size:888K  st
stgb18n40lzt4.pdf pdf_icon

STGB18N40LZ

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZAutomotive-grade 390 V internally clamped IGBT ESCIS 180 mJDatasheet - production dataFeaturesTABTAB Designed for automotive applications and 3AEC-Q101 qualified3121 180 mJ of avalanche energy @ TC = 150 C, DPAKL = 3 mHIPAK ESD gate-emitter protectionTAB Gate-collector high voltage clamping TAB

Otros transistores... VWI20-06P1 , VWI35-06P1 , STGB10NB40LZ , STGB10NB60S , STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , GT30F132 , STGB19NC60H , STGB19NC60HD , STGB19NC60K , STGB19NC60KD , STGB19NC60S , STGB19NC60W , STGB20NB41LZ , STGB20NC60V .

History: VS-GT400TH120N | APT15GT60BRG | IXGH48N60A3 | RGT8BM65D | GT50L101 | CM75DY-28H

 

 
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