STGB18N40LZ PDF and Equivalents Search

 

STGB18N40LZ Specs and Replacement

Type Designator: STGB18N40LZ

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 390 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 12 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 3.5 nS

Coesⓘ - Output Capacitance, typ: 90 pF

Package: D2PAK

 STGB18N40LZ Substitution

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STGB18N40LZ datasheet

 ..1. Size:888K  st
stgb18n40lz.pdf pdf_icon

STGB18N40LZ

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3... See More ⇒

 ..2. Size:890K  st
stgb18n40lz stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZ

STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features AEC Q101 compliant 3 3 2 180 mJ of avalanche energy @ TC = 150 C, 1 1 L = 3 mH DPAK IPAK ESD gate-emitter protection Gate-collector high voltage clamping 3 Logic level gate drive 2 1 Low saturation voltage TO-220 3 1 High pulsed current capability 3... See More ⇒

 0.1. Size:887K  st
stgb18n40lzt4 stgd18n40lz stgp18n40lz.pdf pdf_icon

STGB18N40LZ

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB ... See More ⇒

 0.2. Size:888K  st
stgb18n40lzt4.pdf pdf_icon

STGB18N40LZ

STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data Features TAB TAB Designed for automotive applications and 3 AEC-Q101 qualified 3 1 2 1 180 mJ of avalanche energy @ TC = 150 C, DPAK L = 3 mH IPAK ESD gate-emitter protection TAB Gate-collector high voltage clamping TAB ... See More ⇒

Specs: VWI20-06P1 , VWI35-06P1 , STGB10NB40LZ , STGB10NB60S , STGB10NC60HD , STGB10NC60K , STGB10NC60KD , STGB14NC60KD , IRG4PC50W , STGB19NC60H , STGB19NC60HD , STGB19NC60K , STGB19NC60KD , STGB19NC60S , STGB19NC60W , STGB20NB41LZ , STGB20NC60V .

History: RJH60D7BDPQ-E0 | NGTB30N60FLWG

Keywords - STGB18N40LZ transistor spec

 STGB18N40LZ cross reference
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