GT10J301 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT10J301
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 90 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 120 nS
Paquete / Cubierta: TO3P
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GT10J301 Datasheet (PDF)
gt10j301.pdf
GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collectorABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHAR
gt10j303.pdf
GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 10A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI
gt10j321.pdf
GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.03 s (typ.) Low switching loss : Eon = 0.26 mJ (typ.) : Eoff = 0.18 mJ
gt10j311.pdf
GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit: mmHIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SY
Otros transistores... GA400TD25S , GA400TD60U , GA500TD60U , GA50TS120U , GA600GD25S , GA75TS120U , GA75TS60U , GT10G101 , SGT60U65FD1PT , GT10J311 , GT10Q301 , GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 .
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