GT10J301 PDF and Equivalents Search

 

GT10J301 Specs and Replacement

Type Designator: GT10J301

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 90 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Package: TO3P

 GT10J301 Substitution

- IGBT ⓘ Cross-Reference Search

 

GT10J301 datasheet

 ..1. Size:493K  toshiba
 gt10j301.pdf pdf_icon

GT10J301

GT10J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHAR... See More ⇒

 7.1. Size:492K  toshiba
 gt10j303.pdf pdf_icon

GT10J301

GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) (IC = 10A) Low saturation voltage VCE (sat) = 2.7V (Max.) (IC = 10A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI... See More ⇒

 8.1. Size:223K  toshiba
 gt10j321.pdf pdf_icon

GT10J301

GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.03 s (typ.) Low switching loss Eon = 0.26 mJ (typ.) Eoff = 0.18 mJ... See More ⇒

 8.2. Size:457K  toshiba
 gt10j311.pdf pdf_icon

GT10J301

GT10J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J311 Unit mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) Low saturation voltage VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SY... See More ⇒

SHOW MORE

Specs: GA400TD25S, GA400TD60U, GA500TD60U, GA50TS120U, GA600GD25S, GA75TS120U, GA75TS60U, GT10G101, IRGP4063, GT10J311, GT10Q301, GT10Q311, GT15G101, GT15J101, GT15J102, GT15J103, GT15N101

Keywords - GT10J301 transistor spec

 GT10J301 cross reference
 GT10J301 equivalent finder
 GT10J301 lookup
 GT10J301 substitution
 GT10J301 replacement

 

 

 

 

↑ Back to Top
.