STGB8NC60KD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGB8NC60KD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 65 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 6 nS
Coesⓘ - Capacitancia de salida, typ: 46 pF
Encapsulados: D2PAK
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STGB8NC60KD datasheet
stgb8nc60kd stgd8nc60kd stgf8nc60kd stgp8nc60kd.pdf
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features 2 Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility) 3 2 DPAK 1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s 2 Applications High frequency motor controls 3 3 2
stgb8nc60kd.pdf
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features 2 Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility) 3 2 DPAK 1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s 2 Applications High frequency motor controls 3 3 2
Otros transistores... STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , STGB3NC120HD , STGB6NC60HD , STGB7NC60HD , STGB8NC60K , TGD30N40P , STGBL6NC60D , STGBL6NC60DI , STGD10HF60KD , STGD10NC60H , STGD10NC60HD , STGD10NC60KD , STGD10NC60S , STGD10NC60SD .
History: FGA180N33AT | IXXK200N60C3 | AOK20B120D1 | IXSH10N60B2D1 | IXSH15N120BD1 | SKM150GB174D
History: FGA180N33AT | IXXK200N60C3 | AOK20B120D1 | IXSH10N60B2D1 | IXSH15N120BD1 | SKM150GB174D
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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