STGB8NC60KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGB8NC60KD
Tipo de transistor: IGBT + Diode
Código de marcado: GB8NC60KD
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 65 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 6 nS
Coesⓘ - Capacitancia de salida, typ: 46 pF
Qgⓘ - Carga total de la puerta, typ: 19 nC
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de STGB8NC60KD - IGBT
STGB8NC60KD Datasheet (PDF)
stgb8nc60kd stgd8nc60kd stgf8nc60kd stgp8nc60kd.pdf
STGB8NC60KD - STGD8NC60KDSTGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBTFeatures2 Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)32 DPAK1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s2Applications High frequency motor controls 3 32
stgb8nc60kd.pdf
STGB8NC60KD - STGD8NC60KDSTGF8NC60KD - STGP8NC60KD600 V - 8 A - short circuit rugged IGBTFeatures2 Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)32 DPAK1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s2Applications High frequency motor controls 3 32
stgb8nc60k stgd8nc60k stgp8nc60k.pdf
STGB8NC60K - STGD8NC60KSTGP8NC60KN-channel 600V - 8A - D2PAK / DPAK / TO-220Short circuit rated PowerMESH IGBTFeaturesICVCE(sat)TypType VCES@25C @100C3STGB8NC60K 600V 2.2V 8A13STGD8NC60K 600V 2.2V 8A 21 DPAKTO-220STGP8NC60K 600V 2.2V 8A Lower on voltage drop (Vcesat)3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)DPAK
stgb8nc60k.pdf
STGB8NC60K - STGD8NC60KSTGP8NC60KN-channel 600V - 8A - D2PAK / DPAK / TO-220Short circuit rated PowerMESH IGBTFeaturesICVCE(sat)TypType VCES@25C @100C3STGB8NC60K 600V 2.2V 8A13STGD8NC60K 600V 2.2V 8A 21 DPAKTO-220STGP8NC60K 600V 2.2V 8A Lower on voltage drop (Vcesat)3 Lower CRES / CIES ratio (no cross-conduction 1susceptibility)DPAK
Otros transistores... STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , STGB3NC120HD , STGB6NC60HD , STGB7NC60HD , STGB8NC60K , RJP6065DPM , STGBL6NC60D , STGBL6NC60DI , STGD10HF60KD , STGD10NC60H , STGD10NC60HD , STGD10NC60KD , STGD10NC60S , STGD10NC60SD .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2