STGB8NC60KD Specs and Replacement
Type Designator: STGB8NC60KD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 65 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 6 nS
Coesⓘ - Output Capacitance, typ: 46 pF
Package: D2PAK
STGB8NC60KD Substitution - IGBTⓘ Cross-Reference Search
STGB8NC60KD datasheet
stgb8nc60kd stgd8nc60kd stgf8nc60kd stgp8nc60kd.pdf
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features 2 Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility) 3 2 DPAK 1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s 2 Applications High frequency motor controls 3 3 2 ... See More ⇒
stgb8nc60kd.pdf
STGB8NC60KD - STGD8NC60KD STGF8NC60KD - STGP8NC60KD 600 V - 8 A - short circuit rugged IGBT Features 2 Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility) 3 2 DPAK 1 Very soft ultra fast recovery antiparallel diode TO-220 Short circuit withstand time 10 s 2 Applications High frequency motor controls 3 3 2 ... See More ⇒
Specs: STGB20NC60V, STGB30NC60K, STGB35N35LZ, STGB3NB60SD, STGB3NC120HD, STGB6NC60HD, STGB7NC60HD, STGB8NC60K, TGD30N40P, STGBL6NC60D, STGBL6NC60DI, STGD10HF60KD, STGD10NC60H, STGD10NC60HD, STGD10NC60KD, STGD10NC60S, STGD10NC60SD
Keywords - STGB8NC60KD transistor spec
STGB8NC60KD cross reference
STGB8NC60KD equivalent finder
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History: STGD10NC60H
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