STGD10HF60KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGD10HF60KD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 62.5 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 4.4 nS
Coesⓘ - Capacitancia de salida, typ: 45 pF
Paquete / Cubierta: DPAK
- Selección de transistores por parámetros
STGD10HF60KD Datasheet (PDF)
stgd10hf60kd.pdf

STGD10HF60KDAutomotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diodeDatasheet - production dataFeatures Designed for automotive applications and AEC-Q101 qualifiedTAB Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 1susceptibility) Switching losses include diode recovery energyDPAK Short-circuit rated
stgd10nc60sd.pdf

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgd10nc60kd.pdf

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
Otros transistores... STGB3NB60SD , STGB3NC120HD , STGB6NC60HD , STGB7NC60HD , STGB8NC60K , STGB8NC60KD , STGBL6NC60D , STGBL6NC60DI , NCE80TD65BT , STGD10NC60H , STGD10NC60HD , STGD10NC60KD , STGD10NC60S , STGD10NC60SD , STGD14NC60K , STGD18N40LZ , STGD3HF60HD .
History: GT60M102 | NCE50EU65UT | STGFW30H65FB | SGTP40V120FDB2P7 | BLG60T65FDK-K | IRGS4640D
History: GT60M102 | NCE50EU65UT | STGFW30H65FB | SGTP40V120FDB2P7 | BLG60T65FDK-K | IRGS4640D



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