STGD10HF60KD Todos los transistores

 

STGD10HF60KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGD10HF60KD
   Tipo de transistor: IGBT + Diode
   Código de marcado: GD10HF60KD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 62.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 4.4 nS
   Coesⓘ - Capacitancia de salida, typ: 45 pF
   Qgⓘ - Carga total de la puerta, typ: 23 nC
   Paquete / Cubierta: DPAK
 

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STGD10HF60KD Datasheet (PDF)

 ..1. Size:754K  st
stgd10hf60kd.pdf pdf_icon

STGD10HF60KD

STGD10HF60KDAutomotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diodeDatasheet - production dataFeatures Designed for automotive applications and AEC-Q101 qualifiedTAB Low on-voltage drop (VCE(sat))3 Low Cres / Cies ratio (no cross conduction 1susceptibility) Switching losses include diode recovery energyDPAK Short-circuit rated

 8.1. Size:1071K  st
stgd10nc60sd.pdf pdf_icon

STGD10HF60KD

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

 8.2. Size:605K  st
stgd10nc60kd.pdf pdf_icon

STGD10HF60KD

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 8.3. Size:607K  st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf pdf_icon

STGD10HF60KD

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

Otros transistores... STGB3NB60SD , STGB3NC120HD , STGB6NC60HD , STGB7NC60HD , STGB8NC60K , STGB8NC60KD , STGBL6NC60D , STGBL6NC60DI , IRG7S313U , STGD10NC60H , STGD10NC60HD , STGD10NC60KD , STGD10NC60S , STGD10NC60SD , STGD14NC60K , STGD18N40LZ , STGD3HF60HD .

 

 
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