STGD3NB60SD Todos los transistores

 

STGD3NB60SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGD3NB60SD
   Tipo de transistor: IGBT + Diode
   Código de marcado: GD3NB60SD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 48 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 30 pF
   Qgⓘ - Carga total de la puerta, typ: 18 nC
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

STGD3NB60SD Datasheet (PDF)

 ..1. Size:308K  st
 stgd3nb60sd.pdf pdf_icon

STGD3NB60SD

STGD3NB60SDN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGD3NB60SD 600 V

 4.1. Size:411K  st
 stgp3nb60s-stgd3nb60s.pdf pdf_icon

STGD3NB60SD

STGP3NB60SSTGD3NB60SN-CHANNEL 3A - 600V - TO-220 / DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTGP3NB60S 600 V

 5.1. Size:313K  st
 stgd3nb60h.pdf pdf_icon

STGD3NB60SD

STGD3NB60HN-CHANNEL 3A - 600V - DPAKPowerMESH IGBTTYPE VCES VCE(sat) ICSTD3NB60H 600 V

 8.1. Size:895K  st
 stgd3nc120h.pdf pdf_icon

STGD3NB60SD

STGD3NC120H7 A, 1200 V very fast IGBTDatasheet - production dataFeatures High voltage capability High speedTABApplications3 Home appliance21 LightingIPAKDescription(TO251)This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state

MOSTRAR MÁS

Otros transistores... STGD10NC60H , STGD10NC60HD , STGD10NC60KD , STGD10NC60S , STGD10NC60SD , STGD14NC60K , STGD18N40LZ , STGD3HF60HD , RJH60F7BDPQ-A0 , STGD5NB120SZ , STGD6NC60HD , STGD7NB60S , STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI .

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