STGD3NB60SD IGBT. Datasheet pdf. Equivalent
Type Designator: STGD3NB60SD
Type: IGBT + Anti-Parallel Diode
Marking Code: GD3NB60SD
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 48 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 6 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 30 pF
Qgⓘ - Total Gate Charge, typ: 18 nC
Package: DPAK
STGD3NB60SD Transistor Equivalent Substitute - IGBT Cross-Reference Search
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STGD3NC120H7 A, 1200 V very fast IGBTDatasheet - production dataFeatures High voltage capability High speedTABApplications3 Home appliance21 LightingIPAKDescription(TO251)This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state
Datasheet: STGD10NC60H , STGD10NC60HD , STGD10NC60KD , STGD10NC60S , STGD10NC60SD , STGD14NC60K , STGD18N40LZ , STGD3HF60HD , GT30F132 , STGD5NB120SZ , STGD6NC60HD , STGD7NB60S , STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI .
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