STGE50NC60VD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGE50NC60VD
Tipo de transistor: IGBT + Diode
Código de marcado: GE50NC60VD
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.75 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 350 pF
Qgⓘ - Carga total de la puerta, typ: 214 nC
Paquete / Cubierta: ISOTOP
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STGE50NC60VD Datasheet (PDF)
stge50nc60vd.pdf
STGE50NC60VD50 A - 600 V very fast IGBTFeatures High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diodeApplicationsISOTOP High frequency inverters SMPS and PFC in both hard switching and resonant topologies UPS Motor driversFigure 1. Internal s
stge50nc60wd.pdf
STGE50NC60WDN-channel 50A - 600V - ISOTOPUltra fast switching PowerMESH IGBTFeaturesVCE(sat) (Max) IC Type VCES@25C @100CSTGE50NC60WD 600V 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction ISOTOPsusceptibility Very soft ultra fast recovery antiparallel diodeDescriptionUsing the latest high voltage
stge50nb60hd.pdf
STGE50NB60HDN-CHANNEL 50A - 600V - ISOTOPPowerMESH IGBTTYPE VCES VCE(sat) ICSTGY50NB60HD 600 V
Otros transistores... STGD6NC60HD , STGD7NB60S , STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI , STGE200NB60S , FGH40N60UFD , STGE50NC60WD , STGF10NB60SD , STGF10NC60HD , STGF10NC60KD , STGF10NC60SD , STGF14NC60KD , STGF19NC60HD , STGF19NC60KD .
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