STGE50NC60VD Specs and Replacement
Type Designator: STGE50NC60VD
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 90 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 350 pF
Package: ISOTOP
STGE50NC60VD Substitution - IGBT ⓘ Cross-Reference Search
STGE50NC60VD datasheet
stge50nc60vd.pdf
STGE50NC60VD 50 A - 600 V very fast IGBT Features High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications ISOTOP High frequency inverters SMPS and PFC in both hard switching and resonant topologies UPS Motor drivers Figure 1. Internal s... See More ⇒
stge50nc60wd.pdf
STGE50NC60WD N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESH IGBT Features VCE(sat) (Max) IC Type VCES @25 C @100 C STGE50NC60WD 600V 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction ISOTOP susceptibility Very soft ultra fast recovery antiparallel diode Description Using the latest high voltage... See More ⇒
stge50nb60hd.pdf
STGE50NB60HD N-CHANNEL 50A - 600V - ISOTOP PowerMESH IGBT TYPE VCES VCE(sat) IC STGY50NB60HD 600 V ... See More ⇒
Specs: STGD6NC60HD , STGD7NB60S , STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI , STGE200NB60S , MBQ60T65PES , STGE50NC60WD , STGF10NB60SD , STGF10NC60HD , STGF10NC60KD , STGF10NC60SD , STGF14NC60KD , STGF19NC60HD , STGF19NC60KD .
History: STGE50NC60WD
Keywords - STGE50NC60VD transistor spec
STGE50NC60VD cross reference
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History: STGE50NC60WD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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