STGF10NB60SD Todos los transistores

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STGF10NB60SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGF10NB60SD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 25W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 1.25V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 10A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220FP

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STGF10NB60SD Datasheet (PDF)

1.1. stgf10nb60sd.pdf Size:427K _igbt

STGF10NB60SD
STGF10NB60SD

STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability TAB ■ Very soft ultra fast recovery antiparallel diode Applications 3 3 2 2 1 1 ■ Light dimmer ■ Static relays TO-220FP TO-220 ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ Figure 1.

3.1. stgd10nc60sd stgf10nc60sd.pdf Size:1071K _st

STGF10NB60SD
STGF10NB60SD

STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode 3 3 2 1 Application 1 Motor drive DPAK TO-220FP Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between s

3.2. stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf Size:607K _st

STGF10NB60SD
STGF10NB60SD

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10s Description This IGBT utilizes the advanced PowerMESH 3 3 2

3.3. stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf Size:768K _st

STGF10NB60SD
STGF10NB60SD

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D?PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant topologies TO

3.4. stgf10nc60hd.pdf Size:767K _igbt

STGF10NB60SD
STGF10NB60SD

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 ■ Low on-voltage drop (VCE(sat)) 3 ■ Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D²PAK DPAK ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls 3 3 2 2 ■ SMPS and PFC in both hard switch and 1 1 resonant

3.5. stgf10nc60kd.pdf Size:605K _igbt

STGF10NB60SD
STGF10NB60SD

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB ■ Lower on voltage drop (VCE(sat)) 3 ■ Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK ■ Very soft ultra fast recovery antiparallel diode D2PAK TAB ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerM

3.6. stgf10nc60sd.pdf Size:1071K _igbt

STGF10NB60SD
STGF10NB60SD

STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching ■ Low on-voltage drop (VCE(sat)) ■ Very soft ultra fast antiparallel diode 3 3 2 1 Application 1 ■ Motor drive DPAK TO-220FP Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-of

Otros transistores... STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI , STGE200NB60S , STGE50NC60VD , STGE50NC60WD , G20N60B3D , STGF10NC60HD , STGF10NC60KD , STGF10NC60SD , STGF14NC60KD , STGF19NC60HD , STGF19NC60KD , STGF19NC60SD , STGF19NC60WD .

 


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