STGF10NB60SD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGF10NB60SD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 25 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 23 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
trⓘ - Tiempo de subida, typ: 460 nS
Coesⓘ - Capacitancia de salida, typ: 65 pF
Encapsulados: TO220FP
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STGF10NB60SD datasheet
stgf10nb60sd.pdf
STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diode Applications 3 3 2 2 1 1 Light dimmer Static relays TO-220FP TO-220 Motor drive Description This IGBT utilizes the advanced Power MESH Figure 1.
stgf10nb60sd stgp10nb60sd.pdf
STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diode Applications 3 3 2 2 1 1 Light dimmer Static relays TO-220FP TO-220 Motor drive Description This IGBT utilizes the advanced Power MESH Figure 1.
stgf10nc60sd.pdf
STGD10NC60SD STGF10NC60SD 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode 3 3 2 1 Application 1 Motor drive DPAK TO-220FP Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM
Otros transistores... STGD7NC60H , STGD8NC60K , STGD8NC60KD , STGDL6NC60D , STGDL6NC60DI , STGE200NB60S , STGE50NC60VD , STGE50NC60WD , GT30J124 , STGF10NC60HD , STGF10NC60KD , STGF10NC60SD , STGF14NC60KD , STGF19NC60HD , STGF19NC60KD , STGF19NC60SD , STGF19NC60WD .
History: IXGH28N60B
History: IXGH28N60B
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