STGF10NC60SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGF10NC60SD
Tipo de transistor: IGBT + Diode
Código de marcado: GF10NC60SD
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 25 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.75 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 4 nS
Coesⓘ - Capacitancia de salida, typ: 44 pF
Qgⓘ - Carga total de la puerta, typ: 18 nC
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de STGF10NC60SD - IGBT
STGF10NC60SD Datasheet (PDF)
stgf10nc60sd.pdf
STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgd10nc60sd stgf10nc60sd.pdf
STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgf10nc60kd.pdf
STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor
stgf10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HDSTGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBTFeatures2 Low on-voltage drop (VCE(sat))3 Low CRES / CIES ratio (no cross-conduction 3 11susceptibility)DPAK DPAK Very soft ultra fast recovery antiparallel diodeApplications High frequency motor controls3 32 2 SMPS and PFC in both hard switch and 1 1resonant
Otros transistores... STGDL6NC60D , STGDL6NC60DI , STGE200NB60S , STGE50NC60VD , STGE50NC60WD , STGF10NB60SD , STGF10NC60HD , STGF10NC60KD , MBQ60T65PES , STGF14NC60KD , STGF19NC60HD , STGF19NC60KD , STGF19NC60SD , STGF19NC60WD , STGF20NB60S , STGF35HF60W , STGF3NC120HD .
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