STGF10NC60SD Todos los transistores

 

STGF10NC60SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGF10NC60SD
   Tipo de transistor: IGBT + Diode
   Código de marcado: GF10NC60SD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 25 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.75 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 4 nS
   Coesⓘ - Capacitancia de salida, typ: 44 pF
   Qgⓘ - Carga total de la puerta, typ: 18 nC
   Paquete / Cubierta: TO220FP
 

 Búsqueda de reemplazo de STGF10NC60SD IGBT

   - Selección ⓘ de transistores por parámetros

 

STGF10NC60SD Datasheet (PDF)

 ..1. Size:1071K  st
stgf10nc60sd.pdf pdf_icon

STGF10NC60SD

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

 ..2. Size:1071K  st
stgd10nc60sd stgf10nc60sd.pdf pdf_icon

STGF10NC60SD

STGD10NC60SDSTGF10NC60SD10 A, 600 V fast IGBTFeatures Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) Very soft ultra fast antiparallel diode3321Application1 Motor driveDPAKTO-220FPDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of

 4.1. Size:607K  st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf pdf_icon

STGF10NC60SD

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 4.2. Size:605K  st
stgf10nc60kd.pdf pdf_icon

STGF10NC60SD

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

Otros transistores... STGDL6NC60D , STGDL6NC60DI , STGE200NB60S , STGE50NC60VD , STGE50NC60WD , STGF10NB60SD , STGF10NC60HD , STGF10NC60KD , FGPF4536 , STGF14NC60KD , STGF19NC60HD , STGF19NC60KD , STGF19NC60SD , STGF19NC60WD , STGF20NB60S , STGF35HF60W , STGF3NC120HD .

History: MPBW40N65E | HGTP20N60A4

 

 
Back to Top

 


 
.