STGW30N120KD Todos los transistores

 

STGW30N120KD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW30N120KD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 220 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 125 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃

trⓘ - Tiempo de subida, typ: 22 nS

Coesⓘ - Capacitancia de salida, typ: 170 pF

Encapsulados: TO247

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STGW30N120KD datasheet

 ..1. Size:419K  st
stgw30n120kd.pdf pdf_icon

STGW30N120KD

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short

 7.1. Size:328K  st
stgw30nb60hd.pdf pdf_icon

STGW30N120KD

STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V

 7.2. Size:300K  st
stgw30nb60h.pdf pdf_icon

STGW30N120KD

STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V

 7.3. Size:350K  st
stgw30nc60vd.pdf pdf_icon

STGW30N120KD

STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Applications 3 2 High frequency inverters, UPS 1 Motor drive TO-247 long leads SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schemat

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