STGW30N120KD - аналоги и описание IGBT

STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short

STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V

STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V

STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Applications 3 2 High frequency inverters, UPS 1 Motor drive TO-247 long leads SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schemat

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features IC VCE(sat) Type VCES @25 C @100 C STGW30NC120HD 1200V

STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 High frequency inverters Motor drivers Description Figure 1. Internal schematic diagra

STGW30NC60WD 30 A, 600 V ultra fast IGBT Features High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications 3 2 1 High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advan

STGW30N90D 30 A, 900 V very fast IGBT Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application 3 2 1 Application TO-247 Induction heating Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagram bet