Справочник IGBT. STGW30N120KD

 

STGW30N120KD - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: STGW30N120KD
   Тип транзистора: IGBT + Diode
   Маркировка: GW30N120KD
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 125 ℃
   trⓘ - Время нарастания типовое: 22 nS
   Coesⓘ - Выходная емкость, типовая: 170 pF
   Qgⓘ - Общий заряд затвора, typ: 105 nC
   Тип корпуса: TO247

 Аналог (замена) для STGW30N120KD

 

 

STGW30N120KD Datasheet (PDF)

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stgw30n120kd.pdf

STGW30N120KD
STGW30N120KD

STGW30N120KDSTGWA30N120KD30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short

 7.1. Size:328K  st
stgw30nb60hd.pdf

STGW30N120KD
STGW30N120KD

STGW30NB60HDN-CHANNEL 30A - 600V - TO-247PowerMESH IGBTTYPE VCES VCE(sat) (Max) ICSTGW30NB60HD 600 V

 7.2. Size:300K  st
stgw30nb60h.pdf

STGW30N120KD
STGW30N120KD

STGW30NB60HN-CHANNEL 30A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW30NB60H 600 V

 7.3. Size:350K  st
stgw30nc60vd.pdf

STGW30N120KD
STGW30N120KD

STGW30NC60VD40 A, 600 V, very fast IGBT with Ultrafast diodeFeatures High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diodeApplications32 High frequency inverters, UPS1 Motor driveTO-247 long leads SMPS and PFC in both hard switch and resonant topologiesDescriptionFigure 1. Internal schemat

 7.4. Size:302K  st
stgw30nc120hd.pdf

STGW30N120KD
STGW30N120KD

STGW30NC120HDN-channel 1200V - 30A - TO-247very fast PowerMESH IGBTFeaturesICVCE(sat) Type VCES@25C @100CSTGW30NC120HD 1200V

 7.5. Size:345K  st
stgw30nc60kd.pdf

STGW30N120KD
STGW30N120KD

STGW30NC60KD30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode321ApplicationsTO-247 High frequency inverters Motor driversDescriptionFigure 1. Internal schematic diagra

 7.6. Size:542K  st
stgw30nc60wd.pdf

STGW30N120KD
STGW30N120KD

STGW30NC60WD30 A, 600 V ultra fast IGBTFeatures High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications321 High frequency motor controls, inverters, UPSTO-247 HF, SMPS and PFC in both hard switch and resonant topologiesDescriptionThis IGBT utilizes the advan

 7.7. Size:575K  st
stgw30n90d.pdf

STGW30N120KD
STGW30N120KD

STGW30N90D30 A, 900 V very fast IGBTFeatures Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application321ApplicationTO-247 Induction heatingDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagrambet

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