STGW35NB60SD Todos los transistores

 

STGW35NB60SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGW35NB60SD
   Tipo de transistor: IGBT + Diode
   Código de marcado: GW35NB60SD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 200 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.25 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 70 nS
   Coesⓘ - Capacitancia de salida, typ: 167 pF
   Qgⓘ - Carga total de la puerta, typ: 83 nC
   Paquete / Cubierta: TO247

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STGW35NB60SD Datasheet (PDF)

 ..1. Size:244K  st
stgw35nb60sd.pdf

STGW35NB60SD
STGW35NB60SD

STGW35NB60SDN-CHANNEL 35A - 600V - TO-247Low Drop PowerMESH IGBTGeneral featuresVCE(sat) IC VCESType(Max)@ 25C @100CSTGW35NB60SD 600V

 3.1. Size:268K  st
stgw35nb60s.pdf

STGW35NB60SD
STGW35NB60SD

STGW35NB60SN-channel 35A - 600V - TO-247Low drop PowerMESH IGBTFeaturesVCE(sat) IC Type VCES(Max)@ 25C @100CSTGW35NB60S 600V

 7.1. Size:502K  st
stgw35nc120hd.pdf

STGW35NB60SD
STGW35NB60SD

STGW35NC120HD32 A, 1200 V very fast IGBTDatasheet - production dataFeatures Low on-losses Low on-voltage drop (VCE(sat)) High current capability IGBT co-packaged with ultrafast free-wheeling diode3 Low gate charge21 Ideal for soft switching applicationTO-247 long leadsApplication Induction heatingFigure 1. Internal schematic diagram

 8.1. Size:447K  st
stgw35hf60wd.pdf

STGW35NB60SD
STGW35NB60SD

STGW35HF60WD35 A, 600 V ultra fast IGBTFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 321ApplicationsTO-247 Welding High frequency converters Power factor correctionDescriptionFigure 1. Internal schemati

 8.2. Size:1050K  st
stgw35hf60wdi.pdf

STGW35NB60SD
STGW35NB60SD

STGW35HF60WDI35 A, 600 V ultrafast IGBT with low drop diodeFeatures Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode Applications321 WeldingTO-247 Induction heating Resonant convertersDescriptionThis ultrafast IGBT is developed using a new Figure 1. Interna

 8.3. Size:633K  st
stgw35hf60w.pdf

STGW35NB60SD
STGW35NB60SD

STGF35HF60W, STGW35HF60W,STGFW35HF60W35 A, 600 V Ultrafast IGBTDatasheet - production dataFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses332211ApplicationsTO-247TO-220FP Welding High frequency converters111 Power factor correction321DescriptionTO-3PFThis Ultrafast IGBT is develope

Otros transistores... STGW30N90D , STGW30NC120HD , STGW30NC60KD , STGW30NC60VD , STGW30NC60WD , STGW35HF60W , STGW35HF60WD , STGW35HF60WDI , MBQ50T65FESC , STGW35NC120HD , STGW38IH130D , STGW39NC60VD , STGW40N120KD , STGW40NC60KD , STGW40NC60V , STGW40NC60W , STGW40NC60WD .

 

 
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