STGW35NB60SD Todos los transistores

STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features VCE(sat) IC VCES Type (Max)@ 25 C @100 C STGW35NB60SD 600V

STGW35NB60S N-channel 35A - 600V - TO-247 Low drop PowerMESH IGBT Features VCE(sat) IC Type VCES (Max)@ 25 C @100 C STGW35NB60S 600V

STGW35NC120HD 32 A, 1200 V very fast IGBT Datasheet - production data Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability IGBT co-packaged with ultrafast free-wheeling diode 3 Low gate charge 2 1 Ideal for soft switching application TO-247 long leads Application Induction heating Figure 1. Internal schematic diagram

STGW35HF60WD 35 A, 600 V ultra fast IGBT Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 3 2 1 Applications TO-247 Welding High frequency converters Power factor correction Description Figure 1. Internal schemati

STGW35HF60WDI 35 A, 600 V ultrafast IGBT with low drop diode Features Improved Eoff at elevated temperature Low CRES / CIES ratio (no cross-conduction susceptibility) Low VF soft recovery antiparallel diode Applications 3 2 1 Welding TO-247 Induction heating Resonant converters Description This ultrafast IGBT is developed using a new Figure 1. Interna

STGF35HF60W, STGW35HF60W, STGFW35HF60W 35 A, 600 V Ultrafast IGBT Datasheet - production data Features Improved Eoff at elevated temperature Minimal tail current Low conduction losses 3 3 2 2 1 1 Applications TO-247 TO-220FP Welding High frequency converters 1 1 1 Power factor correction 3 2 1 Description TO-3PF This Ultrafast IGBT is develope