STGW35NB60SD Datasheet and Replacement
Type Designator: STGW35NB60SD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 70 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.25 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 167 pF
Package: TO247
- IGBT Cross-Reference
STGW35NB60SD Datasheet (PDF)
stgw35nb60sd.pdf

STGW35NB60SDN-CHANNEL 35A - 600V - TO-247Low Drop PowerMESH IGBTGeneral featuresVCE(sat) IC VCESType(Max)@ 25C @100CSTGW35NB60SD 600V
stgw35nb60s.pdf

STGW35NB60SN-channel 35A - 600V - TO-247Low drop PowerMESH IGBTFeaturesVCE(sat) IC Type VCES(Max)@ 25C @100CSTGW35NB60S 600V
stgw35nc120hd.pdf

STGW35NC120HD32 A, 1200 V very fast IGBTDatasheet - production dataFeatures Low on-losses Low on-voltage drop (VCE(sat)) High current capability IGBT co-packaged with ultrafast free-wheeling diode3 Low gate charge21 Ideal for soft switching applicationTO-247 long leadsApplication Induction heatingFigure 1. Internal schematic diagram
stgw35hf60wd.pdf

STGW35HF60WD35 A, 600 V ultra fast IGBTFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses VCE(sat) classified for easy parallel connection Ultra fast soft recovery antiparallel diode 321ApplicationsTO-247 Welding High frequency converters Power factor correctionDescriptionFigure 1. Internal schemati
Datasheet: STGW30N90D , STGW30NC120HD , STGW30NC60KD , STGW30NC60VD , STGW30NC60WD , STGW35HF60W , STGW35HF60WD , STGW35HF60WDI , GT30F132 , STGW35NC120HD , STGW38IH130D , STGW39NC60VD , STGW40N120KD , STGW40NC60KD , STGW40NC60V , STGW40NC60W , STGW40NC60WD .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - STGW35NB60SD transistor datasheet
STGW35NB60SD cross reference
STGW35NB60SD equivalent finder
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STGW35NB60SD replacement
History: MG25Q6ES51 | 7MBR75U2B060



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