GT15Q311 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GT15Q311 datasheet

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GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25 C) Char

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GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 High-Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 C) Cha

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gt15q102.pdf pdf_icon

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit mm Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V

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