GT15Q311 Datasheet. Specs and Replacement

Type Designator: GT15Q311  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 160 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: DPAK

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GT15Q311 datasheet

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GT15Q311

GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Maximum Ratings (Ta = 25 C) Char... See More ⇒

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GT15Q311

GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 High-Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 C) Cha... See More ⇒

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GT15Q311

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit mm Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V ... See More ⇒

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GT15Q311

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Specs: GT10Q311, GT15G101, GT15J101, GT15J102, GT15J103, GT15N101, GT15Q101, GT15Q301, FGH40N60SFD, GT20D101, GT20D101O, GT20D101Y, GT20G101, GT20G102, GT20J301, GT20J311, GT25G101

Keywords - GT15Q311 transistor spec

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