All IGBT. GT15Q311 Datasheet

 

GT15Q311 IGBT. Datasheet pdf. Equivalent

Type Designator: GT15Q311

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 130

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 320

Package: DPAK

GT15Q311 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT15Q311 IGBT. Datasheet pdf. Equivalent

Type Designator: GT15Q311

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 130

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 2.8

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 320

Package: DPAK

GT15Q311 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT15Q311 Datasheet (PDF)

9.1. gt15q102.pdf Size:189K _1

GT15Q311
GT15Q311

GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.32 μs (max) • Low saturation voltage: VCE (sat) = 2.7 V (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 1200 V

Datasheet: GT10Q311 , GT15G101 , GT15J101 , GT15J102 , GT15J103 , GT15N101 , GT15Q101 , GT15Q301 , RJP30H1DPD , GT20D101 , GT20D101O , GT20D101Y , GT20G101 , GT20G102 , GT20J301 , GT20J311 , GT25G101 .

 

 
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