STGWA19NC60HD Todos los transistores

 

STGWA19NC60HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA19NC60HD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 208 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 52 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 7 nS
   Coesⓘ - Capacitancia de salida, typ: 130 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

STGWA19NC60HD Datasheet (PDF)

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stgwa19nc60hd.pdf pdf_icon

STGWA19NC60HD

STGWA19NC60HD31 A, 600 V, very fast IGBT with Ultrafast diodeFeatures Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diodeApplications32 High frequency motor drives1 SMPS and PFC in both hard switch and TO-247resonant topologiesDescriptionThis device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin

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stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd stgwa19nc60hd.pdf pdf_icon

STGWA19NC60HD

STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize

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stgwa15h120df2.pdf pdf_icon

STGWA19NC60HD

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

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stgwa15m120df3.pdf pdf_icon

STGWA19NC60HD

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

Otros transistores... STGW45HF60WDI , STGW45NC60VD , STGW45NC60WD , STGW50H60DF , STGW50HF60S , STGW50HF60SD , STGW50NC60W , STGW60H65F , SGT60U65FD1PT , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS .

History: IXGX72N60A3H1 | IRGIB10B60KD1 | STGW20NB60H | DGC50F65M2 | IXGX82N120B3 | NGB8202N | IRG4PH50KD

 

 
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