STGWA19NC60HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWA19NC60HD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 208 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 52 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 7 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO247
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STGWA19NC60HD Datasheet (PDF)
stgwa19nc60hd.pdf
STGWA19NC60HD31 A, 600 V, very fast IGBT with Ultrafast diodeFeatures Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diodeApplications32 High frequency motor drives1 SMPS and PFC in both hard switch and TO-247resonant topologiesDescriptionThis device is an ultrafast IGBT. It utilizes the advanced Power MESH process resultin
stgb19nc60hd stgf19nc60hd stgp19nc60hd stgw19nc60hd stgwa19nc60hd.pdf
STGx19NC60HDSTGWA19NC60HD19 A, 600 V, very fast IGBT with Ultrafast diodeFeaturesTABTAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode31321DPAKApplicationsTO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies332211DescriptionTO-220FPTO-247This IGBT utilize
stgwa15h120df2.pdf
STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T
stgwa15m120df3.pdf
STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgwa15h120f2.pdf
STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2
stgw15m120df3 stgwa15m120df3.pdf
STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria
stgwa15s120df3.pdf
STGW15S120DF3, STGWA15S120DF3Trench gate field-stop IGBT, S series 1200 V, 15 A low dropDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling3 Low thermal resistance21 Soft and fast recovery antiparallel diodeTO-247TO-247 long leadsApplicat
stgwa100h65dfb2.pdf
STGWA100H65DFB2DatasheetTrench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247 long leads packageFeatures Maximum junction temperature: TJ = 175 C Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distributionTO-247 long leads Low thermal resistance
stgw15h120df2 stgwa15h120df2.pdf
STGW15H120DF2, STGWA15H120DF2DatasheetTrench gate field-stop IGBT, H series 1200 V, 15 A high speedFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3 VCE(sat) = 2.1 V @ IC = 15 A23121 5 s minimum short circuit withstand time at TJ = 150 CTO-247 TO-247 long leads Safe paralleling Low the
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