STGWA19NC60HD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWA19NC60HD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 208 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 52 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 7 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de STGWA19NC60HD IGBT
STGWA19NC60HD datasheet
stgwa19nc60hd.pdf
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STGx19NC60HD STGWA19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode 3 1 3 2 1 D PAK Applications TO-220 High frequency motor drives SMPS and PFC in both hard switch and resonant topologies 3 3 2 2 1 1 Description TO-220FP TO-247 This IGBT utilize
stgwa15h120df2.pdf
STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 T
stgwa15m120df3.pdf
STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria
Otros transistores... STGW45HF60WDI , STGW45NC60VD , STGW45NC60WD , STGW50H60DF , STGW50HF60S , STGW50HF60SD , STGW50NC60W , STGW60H65F , GT30F125 , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS .
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