STGWF30NC60S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWF30NC60S  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 79 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 8.5 nS

Coesⓘ - Capacitancia de salida, typ: 185 pF

Encapsulados: TO3PF

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STGWF30NC60S datasheet

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stgf30nc60s stgp30nc60s stgwf30nc60s.pdf pdf_icon

STGWF30NC60S

STGF30NC60S STGP30NC60S, STGWF30NC60S 30 A, 600 V, fast IGBT Features TAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) 3 3 2 High current capability 2 1 1 TO-220 TO-220FP Application 1 1 1 3 Motor drive 2 1 TO-3PF Description This device utilizes the advanced PowerMESHTM process result

 ..2. Size:491K  st
stgwf30nc60s.pdf pdf_icon

STGWF30NC60S

STGF30NC60S STGP30NC60S, STGWF30NC60S 30 A, 600 V, fast IGBT Features TAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat)) 3 3 2 High current capability 2 1 1 TO-220 TO-220FP Application 1 1 1 3 Motor drive 2 1 TO-3PF Description This device utilizes the advanced PowerMESH process resul

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