STGWT38IH130D
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWT38IH130D
Tipo de transistor: IGBT + Diode
Código de marcado: GW38IH130D
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1300
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 63
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 2.1
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.75
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 102
nS
Coesⓘ - Capacitancia de salida, typ: 155
pF
Qgⓘ - Carga total de la puerta, typ: 127
nC
Paquete / Cubierta:
TO3P
Búsqueda de reemplazo de STGWT38IH130D
- IGBT
STGWT38IH130D
Datasheet (PDF)
..1. Size:796K 1
stgw38ih130d stgwt38ih130d stgws38ih130d.pdf 
STGW38IH130D, STGWT38IH130D33 A - 1300 V - very fast IGBTDatasheet - production dataFeatures Low saturation voltage High current capability Low switching loss Low static and peak forward voltage drop free-3wheeling diode 3221 1Applications Induction cooking, microwave ovensTO-247TO-3P Soft-switching applicationsDescriptionFigure 1. Inter
8.1. Size:1911K st
stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma
8.2. Size:1635K st
stgwt30h65fb.pdf
STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t
8.3. Size:537K st
stgwt30hp65fb.pdf
STGWT30HP65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeaturesTAB Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current32 Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A1TO-3P Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficientC
8.4. Size:1472K st
stgwt30v60f.pdf
STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App
8.5. Size:698K st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C3 3 High speed switching series2 21 1 Minimized tail currentTO-247TO-247 long leads Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 ATAB Tight parameter distribution Safe para
8.6. Size:1905K st
stgwt30v60df.pdf
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma
8.7. Size:419K st
stgwt30h60dfb.pdf
STGW30H60DFB, STGWT30H60DFBTrench gate field-stop IGBT, HB series 600 V, 30 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A3322 Tight parameters distribution11TO-247 Safe parallelingTO-3P Low thermal resist
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