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SKW30N60HS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKW30N60HS

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 3.5

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 41

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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SKW30N60HS Datasheet (PDF)

1.1. skw30n60hs.pdf Size:338K _infineon

SKW30N60HS
SKW30N60HS

 SKW30N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate Eoff increase with temperature - very tight parameter distribution

1.2. skw30n60hsg.pdf Size:348K _infineon

SKW30N60HS
SKW30N60HS

 SKW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedne

 2.1. skw30n60g.pdf Size:319K _infineon

SKW30N60HS
SKW30N60HS

 SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: E - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, t

2.2. skw30n60.pdf Size:471K _infineon

SKW30N60HS
SKW30N60HS

SKW30N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s G  Designed for: E - Motor controls - Inverter  NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedn

Otros transistores... STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , GT60M102 , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T .

 

 
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