SKW30N60HS Todos los transistores

 

SKW30N60HS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SKW30N60HS
   Tipo de transistor: IGBT + Diode
   Código de marcado: K30N60HS
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 41 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 21 nS
   Coesⓘ - Capacitancia de salida, typ: 203 pF
   Qgⓘ - Carga total de la puerta, typ: 141 nC
   Paquete / Cubierta: TO247
 

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SKW30N60HS Datasheet (PDF)

 ..1. Size:338K  infineon
 skw30n60hs.pdf pdf_icon

SKW30N60HS

SKW30N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate Eoff increase with temperature - very tight parameter distribution

 0.1. Size:348K  infineon
 skw30n60hsg.pdf pdf_icon

SKW30N60HS

SKW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne

 6.1. Size:471K  infineon
 skw30n60.pdf pdf_icon

SKW30N60HS

SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sG Designed for: E- Motor controls- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedn

 6.2. Size:319K  infineon
 skw30n60g.pdf pdf_icon

SKW30N60HS

SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, t

MOSTRAR MÁS

Otros transistores... STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , HGTG30N60A4 , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T .

 

 
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