SKW30N60HS - параметры транзистора, его аналоги, Даташиты

SKW30N60HS Datasheet (PDF)

..1. Size:338K infineon
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SKW30N60HS^ High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate Eoff increase with temperature - very tight parameter distribution

0.1. Size:348K infineon
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SKW30N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-247-3 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedne

6.1. Size:471K infineon
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SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sG Designed for: E- Motor controls- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high ruggedn

6.2. Size:319K infineon
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SKW30N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G Designed for: E- Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, t

Другие IGBT... STGWA19NC60HD , STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , YGW60N65F1A2 , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T .