IKW15T120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW15T120
Tipo de transistor: IGBT + Diode
Código de marcado: K15T120
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 110 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Qgⓘ - Carga total de la puerta, typ: 85 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW15T120 - IGBT
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Otros transistores... STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , YGW75N65F1 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T .
Liste
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