IKW15T120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW15T120  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 110 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 100 pF

Encapsulados: TO247

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IKW15T120 datasheet

 ..1. Size:364K  infineon
ikw15t120 rev2g 3.pdf pdf_icon

IKW15T120

IKW15T120 TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst

 ..2. Size:452K  infineon
ikw15t120.pdf pdf_icon

IKW15T120

IKW15T120 ^ TrenchStop Series Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V

 9.1. Size:828K  infineon
ikw15n120h3 rev1 2g.pdf pdf_icon

IKW15T120

IKW15N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app

 9.2. Size:2139K  infineon
ikw15n120bh6.pdf pdf_icon

IKW15T120

IKW15N120BH6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi

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