IKW15T120
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW15T120
Tipo de transistor: IGBT + Diode
Código de marcado: K15T120
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 110
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.7
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.5
V
Tjⓘ -
Temperatura máxima de unión: 150
℃
trⓘ - Tiempo de subida, typ: 30
nS
Coesⓘ - Capacitancia de salida, typ: 100
pF
Qgⓘ - Carga total de la puerta, typ: 85
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de IKW15T120
- IGBT
IKW15T120
Datasheet (PDF)
..1. Size:364K infineon
ikw15t120 rev2g 3.pdf 
IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D Short circuit withstand time 10s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst
..2. Size:452K infineon
ikw15t120.pdf
IKW15T120^ TrenchStop SeriesLow Loss DuoPack : IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel EmCon HE diodeC Approx. 1.0V reduced VCE(sat)and 0.5V reduced VF compared to BUP313D Short circuit withstand time 10sGE Designed for :- Frequency Converters- Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V
9.1. Size:828K infineon
ikw15n120h3 rev1 2g.pdf
IKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app
9.2. Size:2139K infineon
ikw15n120bh6.pdf
IKW15N120BH6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
9.3. Size:380K infineon
ikw15n120t2 rev2 1.pdf
IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very tight parameter d
9.4. Size:471K infineon
ikw15n120t2.pdf
IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel Emitter Controlled Diode C Short circuit withstand time 10s Designed for : - Frequency Converters GE - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very t
9.5. Size:2282K infineon
ikw15n120h3.pdf
IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW15N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:
Otros transistores... STGWA60NC60WDR
, STGWF30NC60S
, STGWT38IH130D
, STGY40NC60VD
, STGY50NC60WD
, IKW30N100T
, IKW08T120
, SKW30N60HS
, NCE80TD65BT
, IKW25T120
, IKW40T120
, IKA06N60T
, IKB06N60T
, IKA10N60T
, IKB10N60T
, IKA15N60T
, IKB15N60T
.
