IKW15T120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW15T120 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 110 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Encapsulados: TO247
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IKW15T120 datasheet
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ikw15t120.pdf
IKW15T120 ^ TrenchStop Series Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D Short circuit withstand time 10 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V
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IKW15N120BH6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi
Otros transistores... STGWA60NC60WDR, STGWF30NC60S, STGWT38IH130D, STGY40NC60VD, STGY50NC60WD, IKW30N100T, IKW08T120, SKW30N60HS, KGF75N65KDF, IKW25T120, IKW40T120, IKA06N60T, IKB06N60T, IKA10N60T, IKB10N60T, IKA15N60T, IKB15N60T
History: IKW40T120
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