All IGBT. IKW15T120 Datasheet

 

IKW15T120 Datasheet and Replacement


   Type Designator: IKW15T120
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 110 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Package: TO247
      - IGBT Cross-Reference

 

IKW15T120 Datasheet (PDF)

 ..1. Size:364K  infineon
ikw15t120 rev2g 3.pdf pdf_icon

IKW15T120

IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP313D Short circuit withstand time 10s GE Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldst

 ..2. Size:452K  infineon
ikw15t120.pdf pdf_icon

IKW15T120

IKW15T120^ TrenchStop SeriesLow Loss DuoPack : IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel EmCon HE diodeC Approx. 1.0V reduced VCE(sat)and 0.5V reduced VF compared to BUP313D Short circuit withstand time 10sGE Designed for :- Frequency Converters- Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V

 9.1. Size:828K  infineon
ikw15n120h3 rev1 2g.pdf pdf_icon

IKW15T120

IKW15N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app

 9.2. Size:2139K  infineon
ikw15n120bh6.pdf pdf_icon

IKW15T120

IKW15N120BH6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi

Datasheet: STGWA60NC60WDR , STGWF30NC60S , STGWT38IH130D , STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IHW20N120R2 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T .

History: GT30G125

Keywords - IKW15T120 transistor datasheet

 IKW15T120 cross reference
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