IKA06N60T Todos los transistores

 

IKA06N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKA06N60T
   Tipo de transistor: IGBT + Diode
   Código de marcado: K06T60
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 28 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 5.6 nS
   Coesⓘ - Capacitancia de salida, typ: 28 pF
   Qgⓘ - Carga total de la puerta, typ: 42 nC
   Paquete / Cubierta: TO220
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IKA06N60T Datasheet (PDF)

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IKA06N60T

IKA06N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : GE - very

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IKA06N60T

IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh

Otros transistores... STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , FGW75N60HD , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T .

History: GT20D201 | IRGP4086 | MM10G3T120B | RJP30H1DPP-M0 | HGTG20N60C3D | BT30N60ANF | GT30F123

 

 
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