IKA06N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKA06N60T
Tipo de transistor: IGBT + Diode
Código de marcado: K06T60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 28 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 5.6 nS
Coesⓘ - Capacitancia de salida, typ: 28 pF
Qgⓘ - Carga total de la puerta, typ: 42 nC
Paquete / Cubierta: TO220
Búsqueda de reemplazo de IKA06N60T - IGBT
IKA06N60T Datasheet (PDF)
ika06n60t.pdf
IKA06N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : GE - very
ika06n60trev2 3g.pdf
IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh
Otros transistores... STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , FGW75N60HD , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T .
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