All IGBT. IKA06N60T Datasheet

 

IKA06N60T Datasheet and Replacement


   Type Designator: IKA06N60T
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K06T60
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 28 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 5.6 nS
   Coesⓘ - Output Capacitance, typ: 28 pF
   Qgⓘ - Total Gate Charge, typ: 42 nC
   Package: TO220
      - IGBT Cross-Reference

 

IKA06N60T Datasheet (PDF)

 ..1. Size:464K  infineon
 ika06n60t.pdf pdf_icon

IKA06N60T

IKA06N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : GE - very

 0.1. Size:853K  infineon
 ika06n60trev2 3g.pdf pdf_icon

IKA06N60T

IKA06N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh

Datasheet: STGY40NC60VD , STGY50NC60WD , IKW30N100T , IKW08T120 , SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , FGW75N60HD , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T .

History: STGB30NB60H | KGT25N120NDH | BT30N60ANF | IRG4PC40F

Keywords - IKA06N60T transistor datasheet

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