IKA15N60T Todos los transistores

 

IKA15N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKA15N60T
   Tipo de transistor: IGBT + Diode
   Código de marcado: K15T60
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 35.7 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 18.3 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Coesⓘ - Capacitancia de salida, typ: 55 pF
   Qgⓘ - Carga total de la puerta, typ: 87 nC
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de IKA15N60T - IGBT

 

IKA15N60T Datasheet (PDF)

 ..1. Size:509K  infineon
ika15n60t.pdf

IKA15N60T
IKA15N60T

IKA15N60T TRENCHSTOP Series q Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E TRENCHSTOP and Fieldstop technology for 600V applications offers : - ve

 0.1. Size:517K  infineon
ika15n60trev2 3g.pdf

IKA15N60T
IKA15N60T

IKA15N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter di

 7.1. Size:2352K  infineon
ika15n65h5.pdf

IKA15N60T
IKA15N60T

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA15N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA15N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 7.2. Size:3294K  infineon
ika15n65et6.pdf

IKA15N60T
IKA15N60T

IKA15N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

 7.3. Size:2352K  infineon
ika15n65f5.pdf

IKA15N60T
IKA15N60T

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA15N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA15N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

Otros transistores... SKW30N60HS , IKW15T120 , IKW25T120 , IKW40T120 , IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , TGAN40N60FD , IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 .

 

 
Back to Top

 


IKA15N60T
  IKA15N60T
  IKA15N60T
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top