IKW30N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IKW30N60T Datasheet (PDF)

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IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol

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IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fi

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IGBTTRENCHSTOPTM Performance technology copacked with RAPID 1fast anti-parallel diodeIKW30N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW30N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losses

6.2. Size:1976K infineon
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AIKW30N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor