IKW30N60T Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW30N60T
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 187 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 21 nS
Coesⓘ - Выходная емкость, типовая: 108 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IKW30N60T Datasheet (PDF)
ikw30n60t.pdf

IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol
ikw30n60trev2 3g.pdf

IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fi
ikw30n60dtp.pdf

IGBTTRENCHSTOPTM Performance technology copacked with RAPID 1fast anti-parallel diodeIKW30N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW30N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losses
aikw30n60ct.pdf

AIKW30N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor
Другие IGBT... IKA06N60T , IKB06N60T , IKA10N60T , IKB10N60T , IKA15N60T , IKB15N60T , IKB20N60T , IKW20N60T , GT30J124 , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 .
History: KGT15N120NDH | KGT15N120KDA | GT60J323H | NGTB20N120IHWG | IXA20IF1200HB | MMG75W120X6TN | GM200HB12CT
History: KGT15N120NDH | KGT15N120KDA | GT60J323H | NGTB20N120IHWG | IXA20IF1200HB | MMG75W120X6TN | GM200HB12CT



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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