SKW15N120 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKW15N120
Tipo de transistor: IGBT + Diode
Código de marcado: K15N120
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 198 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 155 pF
Qgⓘ - Carga total de la puerta, typ: 130 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de SKW15N120 - IGBT
SKW15N120 Datasheet (PDF)
skw15n120.pdf
SKW15N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: G- Motor controls E- Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parallel
skw15n120 .pdf
SKW15N120Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for: G- Motor controls E- Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parallel
skw15n60.pdf
SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high
skp15n60 skw15n60.pdf
SKP15N60 SKW15N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high
Otros transistores... IKB15N60T , IKB20N60T , IKW20N60T , IKW30N60T , SL50T120FZ , IKW75N60T , SKB02N120 , SKW07N120 , RJP30H2A , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 .
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