SKB06N60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKB06N60  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 68 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 18 nS

Coesⓘ - Capacitancia de salida, typ: 38 pF

Encapsulados: TO263

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SKB06N60 datasheet

 ..1. Size:1142K  infineon
 skb06n60.pdf pdf_icon

SKB06N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight

 0.1. Size:1147K  infineon
 skb06n60g.pdf pdf_icon

SKB06N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight

 0.2. Size:1184K  infineon
 skb06n60hs.pdf pdf_icon

SKB06N60

SKB06N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn

 0.3. Size:1190K  infineon
 skb06n60hsg.pdf pdf_icon

SKB06N60

SKB06N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn

MOSTRAR MÁS

Otros transistores... IKW75N60T, SKB02N120, SKW07N120, SKW15N120, SKW25N120, SKB02N60, SKB04N60, SKA06N60, G50T65D, SKW10N60A, SKB15N60, SKW15N60, SKW20N60, SKW30N60, SKB15N60HS, SKW20N60HS, IKB01N120H2