SKB06N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SKB06N60
Tipo de transistor: IGBT + Diode
Código de marcado: K06N60
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 68 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 18 nS
Coesⓘ - Capacitancia de salida, typ: 38 pF
Qgⓘ - Carga total de la puerta, typ: 32 nC
Paquete / Cubierta: TO263
- Selección de transistores por parámetros
SKB06N60 Datasheet (PDF)
skb06n60.pdf
SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
skb06n60g.pdf
SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
skb06n60hs.pdf
SKB06N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn
skb06n60hsg.pdf
SKB06N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn
Otros transistores... IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , RJP30E2DPP-M0 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 .
History: IKB20N60H3 | FGH20N60UFD | GT45G128 | AOK40B60D | APT13GP120BDF1 | IKP04N60T | FGH30N120FTD
History: IKB20N60H3 | FGH20N60UFD | GT45G128 | AOK40B60D | APT13GP120BDF1 | IKP04N60T | FGH30N120FTD
Liste
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