SKB06N60 PDF and Equivalents Search

 

SKB06N60 Specs and Replacement

Type Designator: SKB06N60

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 68 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 12 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 38 pF

Package: TO263

 SKB06N60 Substitution

- IGBT ⓘ Cross-Reference Search

 

SKB06N60 datasheet

 ..1. Size:1142K  infineon
 skb06n60.pdf pdf_icon

SKB06N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight ... See More ⇒

 0.1. Size:1147K  infineon
 skb06n60g.pdf pdf_icon

SKB06N60

SKB06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers - very tight ... See More ⇒

 0.2. Size:1184K  infineon
 skb06n60hs.pdf pdf_icon

SKB06N60

SKB06N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn... See More ⇒

 0.3. Size:1190K  infineon
 skb06n60hsg.pdf pdf_icon

SKB06N60

SKB06N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO-263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedn... See More ⇒

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Specs: IKW75N60T , SKB02N120 , SKW07N120 , SKW15N120 , SKW25N120 , SKB02N60 , SKB04N60 , SKA06N60 , SGT50T65FD1PT , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 .

Keywords - SKB06N60 transistor spec

 SKB06N60 cross reference
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