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SKW20N60HS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SKW20N60HS

Código: K20N60HS

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 178W

Tensión colector-emisor (Vce): 600V

Voltaje de saturación colector-emisor (Vce sat): 3.5V

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 36A

Temperatura operativa máxima (Tj), °C:

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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SKW20N60HS Datasheet (PDF)

1.1. skw20n60hs rev2 3g.pdf Size:346K _infineon

SKW20N60HS
SKW20N60HS

SKW20N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stab

1.2. skw20n60hs.pdf Size:853K _igbt

SKW20N60HS
SKW20N60HS

 SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3-21 - moderate Eoff increase with temperature - very tight parameter distribution • High ruggednes

2.1. skw20n60 rev2 2g.pdf Size:315K _infineon

SKW20N60HS
SKW20N60HS

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s G E Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature s

2.2. skw20n60.pdf Size:469K _igbt

SKW20N60HS
SKW20N60HS

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s G E  Designed for: - Motor controls - Inverter  NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugged

Otros transistores... SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , IRG4PC40W , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T .

 


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