All IGBT. SKW20N60HS Datasheet

 

SKW20N60HS Datasheet and Replacement


   Type Designator: SKW20N60HS
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K20N60HS
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 178 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 36 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Qgⓘ - Total Gate Charge, typ: 100 nC
   Package: TO247
      - IGBT Cross-Reference

 

SKW20N60HS Datasheet (PDF)

 ..1. Size:853K  infineon
 skw20n60hs.pdf pdf_icon

SKW20N60HS

SKW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3-21 - moderate Eoff increase with temperature - very tight parameter distribution High ruggednes

 0.1. Size:346K  infineon
 skw20n60hsg.pdf pdf_icon

SKW20N60HS

SKW20N60HSHigh Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s GE Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-247-3 - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness,

 6.1. Size:469K  infineon
 skw20n60.pdf pdf_icon

SKW20N60HS

SKW20N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter ControlledDiodeC 75% lower Eoff compared to previous generationcombined with low conduction losses Short circuit withstand time 10 sGE Designed for:- Motor controls- Inverter NPT-Technology for 600V applications offers:- very tight parameter distribution- high rugged

 6.2. Size:315K  infineon
 skw20n60g.pdf pdf_icon

SKW20N60HS

SKW20N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness,

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Datasheet: SKA06N60 , SKB06N60 , SKW10N60A , SKB15N60 , SKW15N60 , SKW20N60 , SKW30N60 , SKB15N60HS , RJP63F3DPP-M0 , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , IHW30N100R , IHW30N90R , IHW30N60T .

History: FGH20N60SFDTU

Keywords - SKW20N60HS transistor datasheet

 SKW20N60HS cross reference
 SKW20N60HS equivalent finder
 SKW20N60HS lookup
 SKW20N60HS substitution
 SKW20N60HS replacement

 

 
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