IKW03N120H2 Todos los transistores

 

IKW03N120H2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKW03N120H2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 62.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 9.6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 5.2 nS
   Coesⓘ - Capacitancia de salida, typ: 24 pF
   Paquete / Cubierta: TO247
 

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IKW03N120H2 Datasheet (PDF)

 ..1. Size:752K  infineon
 ikw03n120h2.pdf pdf_icon

IKW03N120H2

IKP03N120H2IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter ControlledHE diodeC Designed for:- SMPS- Lamp BallastGE- ZVS-Converter 2nd generation HighSpeed-Technologyfor 1200V applications offers:- loss reduction in resonant circuitsPG-TO-247-3- temperature stable behavior- parallel switching capability- tight parameter dis

 ..2. Size:375K  infineon
 ikp03n120h2 ikw03n120h2 rev2 5g.pdf pdf_icon

IKW03N120H2

IKP03N120H2 IKW03N120H2HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for: - SMPS - Lamp Ballast GE- ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

Otros transistores... SKW20N60 , SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , FGA60N65SMD , IHW30N100R , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T .

History: KGT25N120NDA

 

 
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