IKW03N120H2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW03N120H2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 62.5 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 9.6 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 5.2 nS

Coesⓘ - Capacitancia de salida, typ: 24 pF

Encapsulados: TO247

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IKW03N120H2 datasheet

 ..1. Size:752K  infineon
 ikw03n120h2.pdf pdf_icon

IKW03N120H2

IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

 ..2. Size:375K  infineon
 ikp03n120h2 ikw03n120h2 rev2 5g.pdf pdf_icon

IKW03N120H2

IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C Designed for - SMPS - Lamp Ballast G E - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter dis

Otros transistores... SKW20N60, SKW30N60, SKB15N60HS, SKW20N60HS, IKB01N120H2, SKB06N60HS, IKA03N120H2, IKB03N120H2, RJP30H1DPD, IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, IHW30N90T, IHW40N60T