IHW30N100R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW30N100R 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 412 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Coesⓘ - Capacitancia de salida, typ: 82 pF
Encapsulados: TO247
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IHW30N100R datasheet
..1. Size:324K infineon
ihw30n100r.pdf 
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st
..2. Size:324K infineon
ihw30n100r .pdf
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st
5.1. Size:313K infineon
ihw30n100t rev2 7.pdf
IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem
5.2. Size:313K infineon
ihw30n100t.pdf
IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem
7.1. Size:1646K infineon
ihw30n110r3 1 2.pdf
IGBT Reverse conducting IGBT with monolithic body diode IHW30N110R3 1100V TRENCHSTOPTM IH-Series for Soft Switching Applications Data sheet Industrial & Multimarket IHW30N110R3 TRENCHSTOPTM IH-Series for Soft Switching Applications Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation
7.2. Size:391K infineon
ihw30n160r2 rev2 1g.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior
7.3. Size:1950K infineon
ihw30n120r3.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N120R3 Data sheet Industrial Power Control IHW30N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology offering - very tight parameter d
7.4. Size:1768K infineon
ihw30n135r5.pdf
IHW30N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive
7.5. Size:1440K infineon
ihw30n120r5.pdf
IHW30N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive
7.6. Size:1758K infineon
ihw30n160r5.pdf
IHW30N160R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior G - low V CEsat E - easy parallel switching capability due to positive temperature coeffic
7.7. Size:1984K infineon
ihw30n135r3.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Offers new higher breakdown voltage to 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commu
7.9. Size:360K infineon
ihw30n120r2 rev1 5g.pdf
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications G E offers - very tight parameter distribution - high ruggedness, temperature stable behavior NP
7.10. Size:2046K infineon
ihw30n110r3.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N110R3 Data sheet Industrial Power Control IHW30N110R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only Very tight parameter distribution High ruggedness, tem
7.11. Size:391K infineon
ihw30n160r2.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior
Otros transistores... SKW30N60, SKB15N60HS, SKW20N60HS, IKB01N120H2, SKB06N60HS, IKA03N120H2, IKB03N120H2, IKW03N120H2, JT075N065WED, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, IHW30N90T, IHW40N60T, IHW40T60
