IHW30N100R PDF and Equivalents Search

 

IHW30N100R Specs and Replacement

Type Designator: IHW30N100R

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 412 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

Coesⓘ - Output Capacitance, typ: 82 pF

Package: TO247

 IHW30N100R Substitution

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IHW30N100R datasheet

 ..1. Size:324K  infineon
ihw30n100r.pdf pdf_icon

IHW30N100R

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st... See More ⇒

 ..2. Size:324K  infineon
ihw30n100r .pdf pdf_icon

IHW30N100R

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st... See More ⇒

 5.1. Size:313K  infineon
ihw30n100t rev2 7.pdf pdf_icon

IHW30N100R

IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem... See More ⇒

 5.2. Size:313K  infineon
ihw30n100t.pdf pdf_icon

IHW30N100R

IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem... See More ⇒

Specs: SKW30N60 , SKB15N60HS , SKW20N60HS , IKB01N120H2 , SKB06N60HS , IKA03N120H2 , IKB03N120H2 , IKW03N120H2 , FGH60N60SFD , IHW30N90R , IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 .

Keywords - IHW30N100R transistor spec

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