IHW30N100T
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW30N100T
Tipo de transistor: IGBT + Diode
Código de marcado: H30T100
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 412
W
|Vce|ⓘ - Tensión máxima colector-emisor: 1000
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.55
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 6.4
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 22
nS
Coesⓘ - Capacitancia de salida, typ: 98
pF
Qgⓘ - Carga total de la puerta, typ: 217
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de IHW30N100T
- IGBT
IHW30N100T
Datasheet (PDF)
..1. Size:313K infineon
ihw30n100t rev2 7.pdf 
IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem
..2. Size:313K infineon
ihw30n100t.pdf
IHW30N100T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features: C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175C TrenchStop and Fieldstop technology for 1000 V applications GE offers : - very tight parameter distribution - high ruggedness, tem
5.1. Size:324K infineon
ihw30n100r.pdf
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st
5.2. Size:324K infineon
ihw30n100r .pdf
IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features: C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175C GE Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature st
7.1. Size:1646K infineon
ihw30n110r3 1 2.pdf
IGBTReverse conducting IGBT with monolithic body diodeIHW30N110R31100V TRENCHSTOPTM IH-Series for Soft Switching ApplicationsData sheetIndustrial & MultimarketIHW30N110R3TRENCHSTOPTM IH-Series for Soft Switching ApplicationsReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation
7.2. Size:391K infineon
ihw30n160r2 rev2 1g.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior
7.3. Size:1950K infineon
ihw30n120r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N120R3Data sheetIndustrial Power ControlIHW30N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology offering:- very tight parameter d
7.4. Size:1768K infineon
ihw30n135r5.pdf
IHW30N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
7.5. Size:1440K infineon
ihw30n120r5.pdf
IHW30N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
7.6. Size:1758K infineon
ihw30n160r5.pdf
IHW30N160R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage TRENCHSTOPTM technology applications offers:- very tight parameter distribution- high ruggedness, temperature stable behaviorG- low VCEsatE- easy parallel switching capability due to positivetemperature coeffic
7.7. Size:1984K infineon
ihw30n135r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N135R3Data sheetIndustrial Power ControlIHW30N135R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Offers new higher breakdown voltage to 1350V for improvedreliability Powerful monolithic body diode with low forward voltagedesigned for soft commu
7.8. Size:579K infineon
ihw30n120r2.pdf
IHW30N120R2 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic body diode with very low forward voltage Body diode clamps negative voltages TM TrenchStop and Fieldstop technology for 1200V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior
7.9. Size:360K infineon
ihw30n120r2 rev1 5g.pdf
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages TrenchStop and Fieldstop technology for 1200 V applications GEoffers : - very tight parameter distribution - high ruggedness, temperature stable behavior NP
7.10. Size:2046K infineon
ihw30n110r3.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW30N110R3Data sheetIndustrial Power ControlIHW30N110R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only Very tight parameter distribution High ruggedness, tem
7.11. Size:391K infineon
ihw30n160r2.pdf
IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior
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