IHW30N100T Datasheet. Specs and Replacement

Type Designator: IHW30N100T  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 412 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 98 pF

Package: TO247

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IHW30N100T datasheet

 ..1. Size:313K  infineon
ihw30n100t rev2 7.pdf pdf_icon

IHW30N100T

IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem... See More ⇒

 ..2. Size:313K  infineon
ihw30n100t.pdf pdf_icon

IHW30N100T

IHW30N100T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with anti-parallel diode Features C 1.1V Forward voltage of antiparallel rectifier diode Specified for TJmax = 175 C TrenchStop and Fieldstop technology for 1000 V applications G E offers - very tight parameter distribution - high ruggedness, tem... See More ⇒

 5.1. Size:324K  infineon
ihw30n100r.pdf pdf_icon

IHW30N100T

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st... See More ⇒

 5.2. Size:324K  infineon
ihw30n100r .pdf pdf_icon

IHW30N100T

IHW30N100R Soft Switching Series q Reverse Conducting IGBT with monolithic body diode Features C 1.5V Forward voltage of monolithic body Diode Full Current Rating of monolithic body Diode Specified for TJmax = 175 C G E Trench and Fieldstop technology for 1000 V applications offers - very tight parameter distribution - high ruggedness, temperature st... See More ⇒

Specs: IKA03N120H2, IKB03N120H2, IKW03N120H2, IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW20N120R3, IHW30N90T, IHW40N60T, IHW40T60, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA

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