IHW40T60 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW40T60 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 303 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
Coesⓘ - Capacitancia de salida, typ: 113 pF
Encapsulados: TO247
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IHW40T60 datasheet
..1. Size:577K infineon
ihw40t60.pdf 
IHW40T60 TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features Very low VCE(sat) 1.5V (typ.) Maximum junction temperature 175 C G E Short circuit withstand time 5 s TRENCHSTOP and fieldstop technology for 600V applications offers - very tight parameter distribu
..2. Size:456K infineon
ihw40t60 rev2 0.pdf
IHW40T60 TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop -technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5 s G E Trench and fieldstop technology for 600 V applications offers - very tight parameter distribution
8.1. Size:354K infineon
ihw40t120 d18g.pdf
IHW40T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G E - Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distrib
8.2. Size:352K infineon
ihw40t120.pdf
IHW40T120 Soft Switching Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10 s Designed for - Soft Switching Applications G E - Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers - very tight parameter distrib
9.1. Size:454K infineon
ihw40n60t.pdf
IHW40T60 TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop -technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5 s G E Trench and fieldstop technology for 600 V applications offers - very tight parameter distribution
9.2. Size:788K infineon
ihw40n60rf ver2 3g.pdf
IHW40N60RF IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
9.3. Size:2129K infineon
ihw40n65r5.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW40N65R5 Data sheet Industrial Power Control IHW40N65R5 Resonant Switching Series Reverse-Conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru
9.4. Size:1770K infineon
ihw40n120r5.pdf
IHW40N120R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive
9.5. Size:378K infineon
ihw40n60t-d20rev2 3.pdf
IHW40N60T Soft Switching Series q Low Loss DuoPack IGBT in TrenchStop -technology with anti-parallel diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution - high ruggednes
9.6. Size:792K infineon
ihw40n60r 2 4.pdf
IHW40N60R IH-series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coeffici
9.7. Size:2029K infineon
ihw40n60rf.pdf
IGBT Reverse conducting IGBT IHW40N60RF Resonant Switching Series Data sheet Industrial Power Control IHW40N60RF Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temp
9.8. Size:1767K infineon
ihw40n135r5.pdf
IHW40N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation TRENCHSTOPTM technology offering - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability due to positive
9.9. Size:2060K infineon
ihw40n60r.pdf
IGBT Reverse conducting IGBT IHW40N60R Resonant Switching Series Data sheet Industrial Power Control IHW40N60R Resonant Switching Series Reverse conducting IGBT C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temper
Otros transistores... IHW30N100R, IHW30N90R, IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, IHW30N90T, IHW40N60T, NGD8201N, IHW40N60R, IHW25N120R2, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120, IHW20T120, IKW15N120T2
