IHW40T60
Datasheet and Replacement
Type Designator: IHW40T60
Type: IGBT + Anti-Parallel Diode
Marking Code: H40T60B
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 303
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 80
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.55
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7
V
Tjⓘ -
Maximum Junction Temperature: 175
℃
Coesⓘ - Output Capacitance, typ: 113
pF
Qgⓘ -
Total Gate Charge, typ: 215
nC
Package:
TO247
- IGBT Cross-Reference
IHW40T60
Datasheet (PDF)
..1. Size:577K infineon
ihw40t60.pdf 

IHW40T60TRENCHSTOP Series qLow Loss DuoPack : IGBT in TRENCHSTOP technology with soft, fast recoveryanti-parallel Emitter Controlled HE diodeCFeatures: Very low VCE(sat) 1.5V (typ.) Maximum junction temperature 175CGE Short circuit withstand time 5s TRENCHSTOP and fieldstop technology for 600V applications offers :- very tight parameter distribu
..2. Size:456K infineon
ihw40t60 rev2 0.pdf 

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution
8.1. Size:354K infineon
ihw40t120 d18g.pdf 

IHW40T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10s Designed for : - Soft Switching Applications GE - Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distrib
8.2. Size:352K infineon
ihw40t120.pdf 

IHW40T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Short circuit withstand time 10s Designed for : - Soft Switching Applications GE - Induction Heating TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distrib
9.1. Size:454K infineon
ihw40n60t.pdf 

IHW40T60 TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop-technology with soft, fast recovery anti-parallel EmCon HE diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature 175 C Short circuit withstand time 5s GE Trench and fieldstop technology for 600 V applications offers : - very tight parameter distribution
9.2. Size:788K infineon
ihw40n60rf ver2 3g.pdf 

IHW40N60RFIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat Low EMI Qualified according to JEDEC J-STD-020 and JESD-022 for
9.3. Size:2129K infineon
ihw40n65r5.pdf 

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW40N65R5Data sheetIndustrial Power ControlIHW40N65R5Resonant Switching SeriesReverse-Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru
9.4. Size:1770K infineon
ihw40n120r5.pdf 

IHW40N120R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
9.5. Size:378K infineon
ihw40n60t-d20rev2 3.pdf 

IHW40N60T Soft Switching Series q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggednes
9.6. Size:792K infineon
ihw40n60r 2 4.pdf 

IHW40N60RIH-seriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation onlyGE TrenchStop technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat - easy parallel switching capability due to positive temperature coeffici
9.7. Size:2029K infineon
ihw40n60rf.pdf 

IGBTReverse conducting IGBTIHW40N60RFResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RFResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temp
9.8. Size:1767K infineon
ihw40n135r5.pdf 

IHW40N135R5Resonant Switching SeriesReverse Conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation TRENCHSTOPTM technology offering:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability due to positive
9.9. Size:2060K infineon
ihw40n60r.pdf 

IGBTReverse conducting IGBTIHW40N60RResonant Switching SeriesData sheetIndustrial Power ControlIHW40N60RResonant Switching SeriesReverse conducting IGBTCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temper
Datasheet: IHW30N100R
, IHW30N90R
, IHW30N60T
, IHW30N160R2
, IHW40T120
, IHW30N100T
, IHW30N90T
, IHW40N60T
, YGW60N65F1A1
, IHW40N60R
, IHW25N120R2
, IHD10N60RA
, IHW30N120R2
, IHD06N60RA
, IHW15T120
, IHW20T120
, IKW15N120T2
.
History: RJP30E2DPP-M0
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