IHW25N120R2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IHW25N120R2 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 365 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Coesⓘ - Capacitancia de salida, typ: 68.7 pF
Encapsulados: TO247
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IHW25N120R2 datasheet
ihw25n120r2.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
ihw25n120r2g.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
ihw25n120e1.pdf
Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW25N120E1 Data sheet Industrial Power Control IHW25N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic
Otros transistores... IHW30N60T, IHW30N160R2, IHW40T120, IHW30N100T, IHW30N90T, IHW40N60T, IHW40T60, IHW40N60R, CRG40T65AK5HD, IHD10N60RA, IHW30N120R2, IHD06N60RA, IHW15T120, IHW20T120, IKW15N120T2, IKW25N120T2, IKW40N120T2
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