IHW25N120R2 Datasheet and Replacement
Type Designator: IHW25N120R2
Type: IGBT + Anti-Parallel Diode
Marking Code: H25R1202
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 365 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Coesⓘ - Output Capacitance, typ: 68.7 pF
Qg ⓘ - Total Gate Charge, typ: 60.7 nC
Package: TO247
IHW25N120R2 substitution
IHW25N120R2 Datasheet (PDF)
ihw25n120r2.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
ihw25n120r2g.pdf
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technolog
ihw25n120e1.pdf
Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW25N120E1Data sheetIndustrial Power ControlIHW25N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic
Datasheet: IHW30N60T , IHW30N160R2 , IHW40T120 , IHW30N100T , IHW30N90T , IHW40N60T , IHW40T60 , IHW40N60R , GT45F122 , IHD10N60RA , IHW30N120R2 , IHD06N60RA , IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 .
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