IKW25N120T2 Todos los transistores

 

IKW25N120T2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKW25N120T2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 349 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 20 nS
   Coesⓘ - Capacitancia de salida, typ: 155 pF
   Paquete / Cubierta: TO247
 

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IKW25N120T2 datasheet

 ..1. Size:370K  infineon
 ikw25n120t2 rev2 1.pdf pdf_icon

IKW25N120T2

IKW25N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very tight parameter distribution

 ..2. Size:458K  infineon
 ikw25n120t2.pdf pdf_icon

IKW25N120T2

IKW25N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very tight parame

 5.1. Size:828K  infineon
 ikw25n120h3 rev1 2g.pdf pdf_icon

IKW25N120T2

IKW25N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app

 5.2. Size:2142K  infineon
 ikw25n120h3.pdf pdf_icon

IKW25N120T2

IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW25N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control IKW25N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features

MOSTRAR MÁS

Otros transistores... IHW40N60R , IHW25N120R2 , IHD10N60RA , IHW30N120R2 , IHD06N60RA , IHW15T120 , IHW20T120 , IKW15N120T2 , NGD8201N , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , IHW15N120R3 , IKP04N60T , IKP06N60T , IKP10N60T .

 

 

 


 
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