IHW15N120R3 Todos los transistores

 

IHW15N120R3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IHW15N120R3
   Tipo de transistor: IGBT + Diode
   Código de marcado: H15R1203
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 254 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.48 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   Coesⓘ - Capacitancia de salida, typ: 40 pF
   Qgⓘ - Carga total de la puerta, typ: 165 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IHW15N120R3 Datasheet (PDF)

 ..1. Size:1849K  infineon
ihw15n120r3.pdf pdf_icon

IHW15N120R3

IHW15N120R3Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applications offers:- very tight parameter distributionG- high ruggedness, temperature stable behaviorE- low VCEsat- easy parallel switching capability

 ..2. Size:1590K  infineon
ihw15n120r3 2 2.pdf pdf_icon

IHW15N120R3

IH-seriesReverse conducting IGBT with monolithic body diodeIHW15N120R3Data sheetIndustrial & MultimarketIHW15N120R3IH-seriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStopTM technology applications offers: - very tight parameter distributionG -

 4.1. Size:569K  1
ihw15n120r2 h15r1202.pdf pdf_icon

IHW15N120R3

IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode CFeatures: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers : GE - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI

 5.1. Size:1900K  1
ihw15n120e1.pdf pdf_icon

IHW15N120R3

Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body Diode for soft-switchingIHW15N120E1Data sheetIndustrial Power ControlIHW15N120E1Resonant Soft-Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic body diode with low forward voltagedesigned for soft commutation only TRENCHSTOPTM technology applic

Otros transistores... IHW15T120 , IHW20T120 , IKW15N120T2 , IKW25N120T2 , IKW40N120T2 , SKB10N60A , IKI04N60T , IHW20N120R3 , SGH80N60UFD , IKP04N60T , IKP06N60T , IKP10N60T , IKP15N60T , IKP20N60T , SKP02N60 , SKP04N60 , SKP06N60 .

History: RJH60F7BDPQ-A0 | YGW60N65F1A1 | GT30F125

 

 
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