IHW15N120R3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IHW15N120R3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 254 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.48 V @25℃

Coesⓘ - Capacitancia de salida, typ: 40 pF

Encapsulados: TO247

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IHW15N120R3 datasheet

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IHW15N120R3

IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability

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IHW15N120R3

IH-series Reverse conducting IGBT with monolithic body diode IHW15N120R3 Data sheet Industrial & Multimarket IHW15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStopTM technology applications offers - very tight parameter distribution G -

 4.1. Size:569K  1
 ihw15n120r2 h15r1202.pdf pdf_icon

IHW15N120R3

IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI

 5.1. Size:1900K  1
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IHW15N120R3

Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic

MOSTRAR MÁS

Otros transistores... IHW15T120, IHW20T120, IKW15N120T2, IKW25N120T2, IKW40N120T2, SKB10N60A, IKI04N60T, IHW20N120R3, YGW40N65F1, IKP04N60T, IKP06N60T, IKP10N60T, IKP15N60T, IKP20N60T, SKP02N60, SKP04N60, SKP06N60