IHW15N120R3 datasheet, аналоги, основные параметры
Наименование: IHW15N120R3 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 254 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.48 V @25℃
Coesⓘ - Выходная емкость, типовая: 40 pF
Тип корпуса: TO247
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Аналог (замена) для IHW15N120R3
- подбор ⓘ IGBT транзистора по параметрам
IHW15N120R3 даташит
ihw15n120r3.pdf
IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability
ihw15n120r3 2 2.pdf
IH-series Reverse conducting IGBT with monolithic body diode IHW15N120R3 Data sheet Industrial & Multimarket IHW15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStopTM technology applications offers - very tight parameter distribution G -
ihw15n120r2 h15r1202.pdf
IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI
ihw15n120e1.pdf
Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic
Другие IGBT... IHW15T120, IHW20T120, IKW15N120T2, IKW25N120T2, IKW40N120T2, SKB10N60A, IKI04N60T, IHW20N120R3, YGW40N65F1, IKP04N60T, IKP06N60T, IKP10N60T, IKP15N60T, IKP20N60T, SKP02N60, SKP04N60, SKP06N60
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